dual p-channel enhancement mode power mosfet.
dual p-channel enhancement mode power mosfet.
* VDS = -40V,ID = -7.5A RDS(ON) <42mΩ @ VGS=-10V RDS(ON) <70mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
* S.
G1
D1
G2
D2
General Features
* VDS = -40V,ID = -7.5A RDS(ON) <42mΩ @ VGS=-10V RDS(ON) <70mΩ @ VGS=-4.5V
* .
The HM4885 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.
G1
D1
G2
D2
General Features
* VDS = -40V,ID = -7.5A RDS(ON) <42mΩ @ VGS=-10V RDS(ON) <70mΩ @ V.
Image gallery
TAGS
Download (Size : 535.39KB)